GaN RF Power Transistor: T1G6003028-FSSource: Richardson RFPD
This GaN RF Power Transistor operates in the DC-6 GHz frequency range. It’s ideal for applications involving jammers, military and civilian radar, test instrumentation, professional and military radio communications, and wideband or narrowband amplifiers.
The T1G6003028-FS GaN RF Power Transistor has a 30 W output power at 6 GHz, >14 dB linear gain at 6 GHz, and a low thermal resistance package. The transistor is constructed with TriQuint’s proven 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This process can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.