13-16 GHz GaN Power Amplifier: APN226
Source: Northrop Grumman Microelectronic Products & Services
The APN226 GaN power amplifier covers the 13-16 GHz frequency range and features 20 dB (typ) linear gain, 40 dBm (typ) Psat, a 0.2um GaN HEMT process, 4 mil SiC substrate, and DC power of 24 VDC@ 880 mA.
This GaN HEMT amplifier is a two-stage power device ideal for point-to-point/multipoint radios and SATCOM terminals. It’s been passivated to ensure rugged and reliable operation in harsh environments. Download the datasheet for more information.
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