Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) And Substrate Wafer Market By Technology, Application, Product, Device & By Geography - Forecast & Analysis To 2013 - 2022
Dublin, CA /PRNewswire/ -- Research and Markets (http://www.researchandmarkets.com/research/w29grv/gallium_nitride) has announced the addition of the "Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market by Technology, Application, Product, Device & by Geography - Forecast & Analysis to 2013 - 2022" report to their offering.
Gallium Nitride is an upcoming alternate material to pure silicon in the field of semiconductors and electronics. Several advanced features of gallium nitride proved useful for semiconductors such as high-brightness emission and intensity when used in opto-semiconductors. High power efficiency, superior high frequency handling capacity, and flexibility are generally used in opto-semiconductors alongside various substrates such as Si, sapphire, SiC were discovered. Extensive research studies took place in the past decade to utilize gallium nitride for semiconductor devices and electronic systems in two major segments - power-semiconductors and opto-semiconductors.
The penetration of GaN was the first in opto-semiconductors in 2001, followed by power semiconductors (merging both, pure-power and RF-power semiconductors) in 2007. Commercialization of GaN power semiconductors (discretes and ICs) started at a medium scale in 2008. While the penetration growth rate is healthy and substantial in opto-semiconductors, the penetration rate in power semiconductors is explosive. One of the prime reasons for this is the growing application areas in the medium-voltage (200 to 1 KV) ranges, where GaN offers unique and unbeatable power efficiency over pure silicon. Another reason is the superior capability offered by GaN to handle high switching frequencies (>1 GHz), particularly for RF-power functions such as power amplification and switching in RF devices.
In power semiconductors, several transistors and diodes (and rectifiers) have been in the market since 2008, with extraordinary growth in the volume of power discretes (HEMTs, Diodes, and Rectifiers and FETs) boosting the total revenue of the SiC power semiconductors market. Another factor for revenue growth was from GaN power ICs, where new power ICs (hybrids) such as MMICs and RFICs were launched commercially every year by industry players after extensive R&D efforts on developing new technologies to enable the same. The complete GaN power semiconductors industry shifted to a mass-production scenario in 2011 with the success and revenue potential drawing the focus of several power semiconductor market giants.
The global GaN semiconductor industry's value chain has grown to a vast network of players involved in various segments. There have been tremendous changes in the landscape of the value chain with several developments in segments such as raw material suppliers, EDA and design tool vendors, wafer manufacturers, wafer equipment vendors, foundry models, fabless players, fab facilities, IDMs, ODMs, OEMs, ATP players, and so on.
Key Topics Covered:
- Executive Summary
- Market Overview
- Market Analysis
- Value & Supply Chain Analysis
- Market By Application
- Market By Products
- Power Semiconductors Market By Devices
- Market By Technology
- Gan Substrate Wafer Market
- Market By Geography
- Competitive Landscape
- Company Profiles
- Aixtron Se
- Azzurro Semiconductors Ag
- Cree Incorporated
- Epigan Nv
- Fujitsu Limited
- International Quantum Epitaxy Plc
- Koninklijke Philips N.V.
- Mitsubishi Chemical Corporation
- Nippon Telegraph & Telephone - Advance Technology Corporation
- Rf Micro Devices Incorporated
- Texas Instruments Incorporated
- Toshiba Corporation
For more information visit http://www.researchandmarkets.com/research/w29grv/gallium_nitride.
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