Fully-Matched High-Power GaN/SiC Transistor Offers 50W At 5-6 GHz

Integra Technologies, a leading designer and supplier of high-power RF and microwave transistors and amplifiers, announces the release of a fully-matched, GaN/SiC transistor, offering 50W at 5-6 GHz.

Designed for pulsed C-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50 Ohms and supplies 50W of peak pulsed output power at 50V drain bias. This product covers the frequency range 5.2-5.9 GHz with instantaneous response, and features 14 dB of gain, and 43% efficiency at 1 millisecond/15% pulse conditions.

The device is housed in a RoHS-compatible metal/ceramic flange-mount package with gold metallization. It provides excellent thermal dissipation, and measures 0.800” (20.32mm) wide and 0.400” (10.16mm) in length. It is 100% high-power RF tested in a 50 Ohms RF test fixture and meets all specifications of MIL-STD-750D. Internal assembly is done with a chip and wire approach by expert certified assemblers.

This 50W transistor is an ideal solution for C-band pulsed radar system designs that require immediate full power and high gain.

About Integra Technologies, Inc.

Integra is a leading designer, manufacturer, innovator, and global supplier of high-power RF and microwave transistors and power amplifiers. They have a demonstrable heritage as a provider of dependable standard and custom solutions for low to high volume EW, radar, avionics, defense, communications, and ISM programs. The technologies that Integra fabricates with include GaN/SiC HEMT, Si-LDMOS, Si-VDMOS, and Si-Bipolar semiconductor approaches proven in their own fab and with redundant partners. For more information, visit www.integratech.com.