01.09.14 -- Discovery Enables Fourier Transforms 100x Faster Than FFT
Should You Bring RF/Microwave Prototyping In-House? By LPKF Laser & Electronics, North America
For many companies in the RF/microwave industry, the decision to bring prototyping in-house often involves two options. Either they continue to employ an outside printed circuit board (PCB) fabricator for prototype PCBs, or they make an investment up to $100,000 in an in-house, rapid PCB prototyping machine. This white paper discusses the factors that must be considered when weighing this decision.
Spotlight On Amplifiers
5-MHz To 26-GHz Phase Noise Tester With 50-MHz Offset This phase noise tester covers the 5-MHz to 26-GHz frequency range and features a 50-MHz offset. It’s ideal for general-purpose phase noise tests, automated production testing, crystal oscillator and VCO testing, supply noise verification, and PLL synthesizer locking and characterization.
10,000-Watt RF Power Amplifier This RF solid state CW amplifier has become the industry standard for conducting radiated immunity testing for entire automobiles, producing 10,000 watts over the instantaneous 10-kHz to 225-MHz frequency band with harmonic distortion better than 20 dBc.
Bidirectional RF Power Amplifiers This brochure provides an overview of NuPower’s Xtender series of bidirectional RF power amplifiers. They combine power efficiency, a compact size, and ruggedized packaging, making them ideal for unmanned vehicles, ISR, tactical communications, and other applications with size, weight, and power consumption restrictions.
500-W High-Power Amplifier, 3U Chassis Empower RF Systems continues to leverage next generation hardware and software architecture with the next series of the ‘’size matters” portfolio: 500 W in 3U chassis. This power amplifier family operates in the frequency ranges of 20 to 500 MHz, 500 to 1000 MHz, and 20 to 1000 MHz with the output power guaranteed over full bandwidth and temperature.
High-Transmit-Power GaN Power Amplifier This is a class AB, GaN amplifier module with high linear transmit power with superior EVM performance and greater than 40 percent efficiency. Its 30-MHz to 3000-MHz frequency range makes it suitable for a wide variety of applications.
X-Band Solid State Power Amplifier (SSPA) CPI’s X-band SSPA covers the 8.8- to 9.6-GHz frequency range and has been designed for use in radar applications. It utilizes high-efficiency GaN transistors combined into 900-W, air-cooled bricks.
This two-stage, low-noise amplifier covers the 7-GHz to 11-GHz frequency range and is 1.5 mm x 1 mm x 0.05 mm. It features a 1-dB noise figure at 9 GHz, 23-dB small signal gain, and a P1dB output power of 15.5 dBm under self-biased condition.
The APN226 GaN power amplifier covers the 13- to 16-GHz frequency range and features 20-dB (typ) linear gain, 40-dBm (typ) Psat, a 0.2-um GaN HEMT process, 4-mil SiC substrate, and DC power of 24 VDC at 880 mA.
NTT-AT provides GaN epitaxial wafers for wireless communications, high frequency, and high-power devices. Thanks to the new fabrication technique developed by NTT laboratories, the high production yield ratio has been achieved.