News | June 4, 2014

Diamond Microwave Launches Ultra-Compact 2 – 6GHz GaN SSPA

DM-SC50-01_lowres

Broadband solid-state amplifier offers up to 100W peak pulsed power and 50W average power

Diamond Microwave, a specialist in high performance microwave power amplifiers, is extending its range of GaN-based solid-state power amplifiers (SSPA) to include a 2 - 6GHz model that can be operated in either pulsed or CW mode.

Announced at this week’s International Microwave Symposium (IMS) in Tampa, the DM‑SC50‑01 is an ultra-compact broadband amplifier that complements Diamond Microwave’s existing SSPAs in X-Band and Ku-Band. All of Diamond Microwave’s amplifiers are ideal for use in demanding defence, aerospace and communications applications.

“We are releasing provisional data at IMS 2014 for a new 2 – 6GHz ultra-compact design, which is demonstrating 100W peak power in pulsed mode at 2GHz and an average power capability of 50W across the full band,” said Richard Lang, managing director at Diamond Microwave. “This amplifier measures only 120 x 100 x 20mm3 excluding the heat sink. Once again we are pushing the boundaries of solid-state power amplifier technology with an extremely compact solution.”

The amplifier designs are flexible in layout and architecture, and are fully customisable to meet individual specifications for electrical, mechanical and environmental parameters. Amplifiers with pulsed power outputs in excess of 1kW, and with multi-octave performance are also under development.

Diamond Microwave is exhibiting on Booth 1651 at the IEEE International Microwave Symposium in Tampa.

About Diamond Microwave
Diamond Microwave specialises in compact, GaN-based solid-state power amplifiers (SSPA) customised for use in demanding high-reliability defence and communications applications. Our amplifiers offer state-of-the-art power performance coupled with a power-to-volume ratio which we believe to be amongst the highest in the industry for such products. Our compact pulsed amplifiers are similar in size to a smartphone and achieve pulsed power output levels of up to 150W in narrowband X- and Ku-band designs, with the potential for pulsed outputs up to 1kW and multi-octave bandwidths. These amplifiers offer a credible alternative to TWT amplifiers, with low cost of ownership.

Diamond Microwave also has substantial experience in the development of diamond as a semiconductor and holds several patents related to diamond transistor structures. The company continues to carry out research into diamond as a future power transistor technology. For more information, visit www.diamondmw.com.

SOURCE: Diamond Microwave

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