Analysis Of A GaN/SiC UHF Radar Amplifier For Operation At 125V Bias

A transistor was tested in a UHF pulsed radar power amplifier operating with GaN technology in order to achieve a higher voltage output. This article investigates the relationship between Fe concentration in the buffer layer and breakdown voltage of an AlGaN/GaN on SiC HEMT transistor in order to operate in a UHF power amplifier operated at a bias of 100V or higher. Download the full paper for a breakdown of the voltage enhancement techniques in the experiment, as well as a full account of its results.