50V GaN HEMT for LTE: CGHV22100Source: Cree, Inc.
This GaN HEMT (gallium-nitride high electron mobility transistor) covers the 1.8-2.2 GHz frequency range. It features 20 dB Gain, -35 dBc ACLR (at 25 W PAVE), and 31-35% efficiency (at 25 W PAVE). A high degree of DPD (digital pre-distortion) correction can also be applied to this transistor.
This 50V GaN HEMT has been designed for high efficiency, high gain, and wide bandwidth capabilities, making it ideal for LTE, 4G, telecom, and BWA amplifier applications. This transistor ultimately has the ability to significantly reduce the energy needed to power cellular networks.
Implementation of this device in radio base station power amplifiers have indicated a greater than 20% performance improvement over similar transistors operating at 2.6 GHz while operating under the latest 4G LTE signals.
This HEMT has been designed to lower a systems cost by making integrated power amplifiers with higher efficiency and better performance. This is done through simplified cooling, and the use of higher voltage GaN components. Download the datasheet for more information.