Product/Service

125-167 MHz 650W VHF Band Transistor

Source: Integra Technologies, Inc.
The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz...

The high power pulsed transistor part number IDM165L650 is designed for VHF-Band systems operating at 125-167 MHz. Operating at a pulse width of 1ms with a duty factor of 20%, this dual MOSFET device supplies a minimum of 650 watts of peak pulse power at a fixed input power of 80 watts across the instantaneous operating bandwidth of 125-167 MHz. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.

Features

Silicon MOSFET

  • High Power Gain
  • Superior thermal stability
Class B Operation
  • Gate biased to IDQ=0mA Configuration
  • Dual In-phase operation
  • Common Source
Gold Metal
  • Maximum Reliability Be0 Package
  • Unmatched Thermal Reliability
Epoxy Sealed Lid
  • Gross Leak Qualified
RF Test Fixture
  • Broadband
  • Matched to 50Ω
  • Long-term Correlation Maintained
  • 100% Device RF Screening
  • No External Tuning Allowed

Downloads:
•Datasheet: IDM165L650 VHF-Band Pulsed Transistor