100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures
Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.
Qorvo’s QPD2730 is a 220 Watt asymmetric Doherty power transistor composed of pre-matched, discrete GaN on SiC HEMTs. With an operational frequency range of 2.575 to 2.635 GHz, this transistor is ideal for W-CDMA/LTE, macrocell base station, active antenna, and asymmetric Doherty applications.
More features and specifications on this power amplifier and power transistor can be found on their respective datasheets.
Come learn more about this power amplifier, transistor, and other Qorvo products at IMS, booth number 839!