Microsemi Introduces UHF Transistor For Long Pulsed Radar Applications

"After the well-received market acceptance of our UHF "One Transistor, One Thousand Watt" device -- the 0405-1000M -- we are very pleased to introduce this new UHF long pulse, high duty cycle 500 watts transistor to the market" said Jerry Chang, Director of Radar and RF Module Business in Santa Clara, California.

"Microsemi's RF Power Products Group continues to develop state-of-the-art Silicon BJT RF transistor technology while aggressively investing in Wide Band Gap technology for future leading edge applications," he added.

Designated the 0405-500L, this bipolar transistor is designed for UHF frequencies between 400 and 450 MHz. This high performance, common emitter, class C, high power transistor offers unparalleled performance of 500W of peak power, 50% collector efficiency and is in a hermetically sealed package for the best reliability for long pulsed radar and over the horizon radar applications.

Microsemi's latest RF transistor utilizes a new chip design and processing enhancements to offer state-of-the-art performance, notably in high power and high gain over the specified frequency range with 1.1 ms pulse width and 26% duty cycle.

SOURCE: Microsemi Corporation