Microsemi Expands S-Band RF Power Transistor Family To Include High-Performance GaN-on-SiC Devices

Microsemi Corporation (Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, has expanded its family of S-band RF power transistors to include devices that use advanced gallium nitride (GaN) process technology on a silicon carbide (SiC) substrate. The company's GaN-on-SiC high-pulsed power transistors deliver industry-leading peak power and power gain for radar systems operating in the 2.7 GHz to 3.5 GHz frequency band.

Microsemi has leveraged its industry-leading expertise in S-band RF power transistors to create a family of GaN-on-SiC solutions that are tailored to support the requirements of next-generation systems requiring higher power, better efficiency, and wider bandwidth than is possible using conventional silicon or SiC process technologies. For applications operating in frequency bands up to 20GHz, the wide bandgap material properties of GaN-on-SiC technology enable smaller systems with improved voltage, gain, broadband performance, drain efficiency, and long-term reliability.

Microsemi's new GaN-on-SiC power transistors complement the company's extensive family of Silicon BJT, RF MOSFET (VDMOS) and RF NPN power transistors, including SiC SIT devices that provide superior performance in high-power UHF Band pulsed radar applications operating at frequencies up to 450 MHz. Microsemi also uses GaN technology for a family of Enhancement Mode GaN field-effect transistors (FETs) used in satellites and other military power conversion, point-of-load, and high speed switching applications.

SOURCE: Microsemi Corporation