Microsemi Announces NPT Technology For High Switching Frequency Applications

Irvine, CA -- Microsemi Corporation has announced a new series of high speed IGBT transistors developed for welding, low to mid-power solar inverters, uninterruptible power supplies and industrial switch mode power supply applications.

Designated the Thunderbolt HS IGBT Series, the new IGBTs are Microsemi's next generation of NPT technology targeting high switching frequency applications. These devices exhibit higher saturation voltage and lower turn-off energy losses. Low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but at lower cost. Thunderbolt HS IGBTs are available as single devices or packaged with a DQ Series fast, soft recovery diode.

An extremely tight parameter distribution combined with a positive temperature coefficient make it easy to parallel Thunderbolt HS IGBTs. Controlled slew rates result in high noise and oscillation immunity and low EMI. The short circuit duration rating of 10 microseconds makes these IGBTs suitable for inverter and motor drive applications. Reliability is further enhanced by avalanche energy ruggedness.

The fast recovery performance of the anti-parallel DQ diode in Combi versions make the Thunderbolt HS series suitable for hard switching applications. The Combi diode performance combined with fast turn-off of the IGBT combine to yield reliability in ZVS applications. The Thunderbolt HS Series is suited for medium to high power applications requiring minimum system cost and high performance.

Rated at 600 volts and 2.8 volts typical V(CE(ON) the new high speed IGBTs are available in 20 amp, 30 amp, and 50 amp versions in TO-220, TO-247, or D(3) packages. Combi versions include a DQ series fast recovery anti-parallel diode.

Thunderbolt and Combi samples are available immediately.

SOURCE: Microsemi Corporation