Integra Announces New L-Band GaN-On-SiC Products

Integra Expands Portfolio of Devices for the L-band Avionics Market.

Integra Technologies, Inc. (ITI), a leading manufacturer of high power pulsed RF transistors, recently announced the development of two Gallium Nitride on Silicon Carbide (GaN on SiC) technology devices targeted for the L-band market. Integra's world class RF design team have launched two new products characterized in the L-band the IGN0912L500 and the IGN1214L500.

"Integra further solidifies its leadership position in high power pulsed RF transistors in the L-band radar market with these two new products." says Jeff Burger, VP of Engineering and original founding member. "We continue to provide superior technology and excellent support to customers in our target market."

About the IGN0912L500
Intended for commercial avionics applications including IFF, TACAN and DME applications, the PN IGN0912L500 operates over the instantaneous bandwidth covering 960 GHz to 1215 GHz in the L-band frequency range. Characterized with a pulse train of 444 x (7us ON, 6us OFF) with 22.7 % LTDC the IGN0912L500 typically supplies a minimum of 500 watts of peak output power. The single ended device provides over 12dB of gain and 62% efficiency. The device is housed in a ceramic flanged package providing excellent thermal advantages over plastic packaged devices.

About the IGN1214L500
The PN IGN1214L500 operates over the instantaneous bandwidth covering 1.2 GHz to 1.4 GHz in the L-band frequency range. Intended for L-band radar applications that device is characterized under 1ms and 10% duty cycle conditions and supplies more than 500W of output power while providing 13dB of gain and 60% efficiency. The single ended device is housed in a ceramic flanged package providing excellent thermal advantages.

Samples and Availability
The IGN0912L500 and IGN1214L500 are available for sampling in Q3 2011

About Integra Technologies
Integra is the premier supplier of high power pulsed transistors to the aviation industry, with an enviable portfolio covering radar bands in the UHF/VHF, L-band, S-band and C-band for commercial, military and defense markets. Integra services these markets with a variety of semiconductor technologies including VDMOS, LDMOS, bipolar and GaN-on-SiC. Privately owned and operated, Integra employs nearly 100 people at its worldwide headquarters located in El Segundo, CA. Integra's patented technology starts with an all-gold metallization process for all elements of the die fabrication process to ensure the highest reliability in the industry. With a team of highly knowledgeable RF designers ready to offer application support, we offer both discrete devices and integrated pallets for a commanding presence in the S-band radar marketplace.

For More information, visit http://www.integratech.com

SOURCE: Integra Technologies, Inc. (ITI)