Product/Service
HF12-100 Bipolar Power Transistor
Source: Spectrum Devices
The HF12-100 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF
communications.
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•Datasheet: HF12-100 Bipolar Power Transistor
•Datasheet: HF12-100 Bipolar Power Transistor
•Datasheet: HF12-100 Bipolar Power Transistor
The HF12-100 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. The HF12-series products utilize the unique Spectrum Devices' Bipolar process which offers a 67% improvement in collector-base breakdown voltage, enhancing reliability while maintaining RF performance.
Features:
- 30 MHz
- 12.5 Volts
- IMD –30 dB
- Common Emitter
- Gold Metallization
- Pout= 100W PEP Min. with 11 dB Gain
- Improved Collector-Base Breakdown Voltage: 60Volts Min.
- Direct replacement for ST SD1487
•Datasheet: HF12-100 Bipolar Power Transistor
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