Product/Service


2200-Watts, 125 Volts, Class AB, 406 To 450 MHz Silicon Carbide SIT - 0405SC-2200M

The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 2200 Watts of RF Peak power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to the series of High Power Silicon Carbide Transistors from Microsemi RF IS.
Details

Click Here To Download:
Datasheet: 2200-Watts, 125 Volts, Class AB, 406 To 450 MHz Silicon Carbide SIT - 0405SC-2200M

The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 2200 Watts of RF Peak power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to the series of High Power Silicon Carbide Transistors from Microsemi RF IS.

Click Here To Download:
Datasheet: 2200-Watts, 125 Volts, Class AB, 406 To 450 MHz Silicon Carbide SIT - 0405SC-2200M


Need More Information? Just Ask.
Click the button below to directly contact the supplier. Use it to:
  • Ask a question.
  • Request more detailed information or literature.
  • Discuss your current project/application.
  • Request a quote.
  • Locate a distributor in your area.
  • Schedule a demo.

Microsemi Corporation

More From Microsemi Corporation

Please wait... busy