| Datasheet: Model 3206 RF Switching System |
Dow-Key Microwave is pleased to offer 75-ohm switching systems as a great addition to their 50-ohm matrix product line. These systems are ideal to be used in the broadcasting industry for receiving and transmitting 75-ohm signals, but are equally valued to be used with any other 75-ohm application.
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07/01/2009 |
450.2 KB |
| Datasheet: SKY12334-362LF - 5-Bit Digital Attenuator |
The SKY12334-362LF is a GaAs FET IC 5-bit digital attenuator with a Si serial-to-parallel driver packaged in a 24-pin leadless exposed pad plastic package. It is particularly well suited for applications in which high attenuation accuracy, low insertion loss, and low intermodulation products are required. Typical applications include base station, wireless and wireless local loop gain control circuits. |
06/29/2009 |
961.5 KB |
| Datasheet: SKY13323-378LF - SPDT Switch 1 x 1 mm |
The SKY13323-378LF is a pHEMT GaAs FET I/C switch. The switch may be used in transmit/receive applications by connecting the RF common port (INPUT, pin 5) to either the OUTPUT1 or OUTPUT2 port (pin 1 or 3, respectively) using a low loss path (i.e., a positive voltage applied to either VCTL1 or VCTL2 pins). The switch is “reflective short” on the isolated port.
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06/29/2009 |
670.5 KB |
| Datasheet: E-pHEMT MMIC - AE312 |
AE312 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise. |
06/29/2009 |
200.7 KB |
| Datasheet: E-pHEMT MMIC - AE314 |
AE314 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise. |
06/29/2009 |
169.3 KB |
| Datasheet: ARF477FL -- RF Power MOSFET Transistors |
The new ARF477FL is a 500V (BVdss) push-pull matched pair transistor product providing up to100MHz operation in the ISM Band for industrial, scientific and medical applications including semiconductor capital equipment and MRI systems... |
06/29/2009 |
153.7 KB |
| Datasheet: VRF152 -- RF Power Vertical MOSFET Transistor |
The new VRF152 from Microsemi is a gold-metalized silicon n-channel RF power transistor designed for broadband commercial and hi-rel applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulations distortion. It can operate up to 175MHz at 150W with a typical gain of 13dB at very high efficiency on a 50V DC supply. |
06/25/2009 |
115.6 KB |
| White Paper: Guidelines For Choosing RF And Microwave Products: Lumped Element (LC) Filters |
As one of the most fundamental filter types, LC filters are also some of the most useful, since they are extremely versatile in the responses they can achieve, the types (such as low-pass, high-pass, etc.) they can accommodate, and their potential performance. Like all filters however, the best choice for a specific application results from trade-offs that can only be determined if the designer has considerable experience in filter design. By Anatech Electronics, Inc. |
06/23/2009 |
330.4 KB |
| Application Note: Setting Up Ultra-Fast Noise Parameters Using The Agilent PNA-X |
This application note provides step-by-step instructions for setting up a test bench for ultra-fast noise parameters measurement using a Maury MT98x Series automated tuner, Maury ATS software version 5.1 with the MT993B01 Ultra-Fast Noise Parameter Option, and the Agilent PNA-X network analyzer. |
06/23/2009 |
457.0 KB |
| Application Note: Setting Up Load Pull With X-Parameters Using The Agilent NVNA |
This application note provides step-by-step instructions for setting up a test bench for load pull with x-parameters measurement using two Maury MT98x Series automated tuners, Maury ATS software version 5.1 (build 5 or newer), and the Agilent PNA-X test set, to test a low-power DUT of a type suitable for direct connection to the PNA-X. |
06/23/2009 |
711.7 KB |
| Datasheet: High-Power Ceramic Diplexers (Surface-Mount) |
In many cases, identification friend or foe (IFF) systems require diplexers to combine transmit and receive channels onto a single antenna. K&L Microwave’s 9DLX0-1030-1090/X8 is used on the interrogator, transmitting at 1030 MHz. The 9DLX0-1090-1030/X8 is for use in the transponder. Both parts are rated to handle 800 watts of peak power and can be used in military airborne and ground applications. |
06/22/2009 |
1.13 MB |
| SG Series Master Development System User’s Guide |
The Linx SG Series RF modules offer a simple, efficient, and cost-effective method of adding GPS capabilities to any product. The Master Development System is intended to give a designer all the tools necessary to correctly incorporate the SG Series into an end product. |
06/22/2009 |
348.7 KB |
| SR Series Master Development System User’s Guide |
The Linx SR Series RF modules offer a simple, efficient, and cost-effective method of adding GPS capabilities to any product. The Master Development System is intended to give a designer all the tools necessary to correctly incorporate the SR Series into an end product. |
06/22/2009 |
312.5 KB |
| Datasheet: SR Series GPS Receiver Modules |
The SR Series GPS receiver module is a selfcontained
high-performance GPS receiver with an
on-board antenna, LNA and SAW filter. Based on the
SiRFstar III chipset, it provides exceptional
sensitivity, even in dense foliage and urban canyons.
The module’s very low power consumption helps
maximize runtimes in battery powered applications. |
06/22/2009 |
402.1 KB |
| Datasheet: SG Series GPS Receiver Modules |
The SG Series GPS receiver module is a selfcontained
high-performance GPS receiver with an
on-board LNA and SAW filter. Based on the SiRFstar
III chipset, it provides exceptional sensitivity, even in
dense foliage and urban canyons. |
06/21/2009 |
581.2 KB |
| Datasheet: Solid-State Broadband Microwave Power Amplifiers - 2 GHz To 40 GHz And To 50 GHz |
Giga-tronics has introduced the GT-1040A and GT-1050A Solid-State Broadband Microwave Power Amplifiers which cover 2 GHz to 40 GHz and 2 GHz to 50 GHz respectively, with high output power, low noise figure, and low harmonics. Designed using Broadband MMIC technology, these amplifiers typically provide ½ Watt (+27 dBm) at 40 GHz and ¼ Watt (+24 dBm) at 50 GHz with > 20 dB gain and < 12 dB noise figure. Gain flatness is typically +/- 3 dB to 40 GHz and +/- 5 dB to 50 GHz.
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06/20/2009 |
601.8 KB |
| Datasheet: SKY65040-360LF - 1.5 To 2.4 GHz Low-Noise Amplifier |
The SKY65040-360LF is a high performance, two-stage ultralow noise amplifier fabricated from Skyworks advanced pHEMT process and packaged in a QFN 8L 2 x 2 mm package. The device features excellent input and output return loss and an integrated interstage matching network. |
06/19/2009 |
1.13 MB |
| Datasheet: SKY65037-360LF - 0.7 To 1.2 GHz Low-Noise Amplifier |
The SKY65037-360LF is a high performance, two-stage ultra-low noise amplifier. The device is fabricated from Skyworks advanced pHEMT process and is provided in a 2 x 2 mm, 8-pin Quad Flat No-Lead (QFN) package. The device features excellent input and output return loss, and an integrated interstage matching network. The amplifier’s ultra-low Noise Figure (NF), high gain, and excellent 3rd Order Intercept point (IP3) allow it to be used in various receiver and transmitter applications.
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06/19/2009 |
640.6 KB |
| Datasheet: MPAL3035M30 - S-Band Radar Miniature Power Amplifier |
Part number MPAL3035M30 is a miniaturized power amplifier which is
internally matched to 50 ohms. It is designed for S-Band radar systems
and operates over the instantaneous bandwidth of 3.0-3.5 GHz. It
utilizes gold metal LDMOS transistor technology operating in common
source configuration. It may be operated in class B, AB and A mode. |
06/18/2009 |
99.7 KB |
| Product Overview: GaN Foundry Services |
RFMD® develops and manufactures unmatched compound semiconductor
technologies and is now offering foundry services for our industry-leading 0.5µm GaN on SiC process. RFMD’s world-class manufacturing scale, supported by the largest III-V factory in the world, enables best-in-class cycle times backed by our on-time shipment pledge. RFMD’s track record as a high-volume, reliable supplier has earned us “preferred partner” status with the industry’s top OEMs while our extraordinary level of customer service continues
to set us apart from the competition. |
06/18/2009 |
1.13 MB |
| Datasheet: RF5602 - 3.3 V To 5.0 V, 2.3 GHz To 2.7 GHz Linear Power Amplifier |
The RF5602 is a linear power amplifier IC designed specifically for medium power applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 802.11b/g/n access point transmitters... |
06/18/2009 |
1.01 MB |
| The AR “Orange Book Of Knowledge”, Third Edition |
As new products, new solutions, and new innovations are created, The Orange Book of Knowledge must naturally expand to reflect new learning. The new edition includes new application notes on topics ranging from "Custom Pulses Made Easy" to a reference guide for coaxial connectors and cables... |
06/17/2009 |
47.88 MB |
| Datasheet: GaAs MMIC Enhancement Mode pHEMT |
The new line of GaAs MMIC Enhancement Mode pHEMTs from RFHIC provide a low noise figure, high effiency, good gain flatness, and lower manufacturing cost. |
06/16/2009 |
270.9 KB |
| Datasheet: Wideband Pallet Amplifiers |
RWP series, 20 MHz to 1000MHz bandwidth coverage, 40W & 20W pallet amplifiers are available in production volumes. Please check out the RWP05040-10, which has typical 37dB gain & 44 to 46 dBm P3dB depending on frequency of 20 to 1000 MHz. |
06/16/2009 |
73.1 KB |
| Datasheet: 20 To 6000 MHz Limiter - ACLM-4748FM22 |
Advanced Control Components limiters will handle from 1W CW to 100CW. They are available in coaxial or stripline modules and are passive, broadband devices designed for receiver protection and power leveling applications. Special limiter diodes are integrated in 50 ohm transmission line structures. The housings are hermetically sealed and internal metallurgical bonds are used to provide the reliability required by the most severe environments.
System applications include protection of transistor amplifiers, parametric amplifiers, mixers and detectors in ECM, communications, telemetry, and radar systems.
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06/16/2009 |
1.77 MB |
