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•Application Note: Pulsed-Bias Pulsed-RF Harmonic Load Pull For Gallium Nitride (GaN) And Wide Band-Gap (WBG) Devices

By Steve Dudkiewicz, Maury Microwave Corporation

This application note is reprinted in this form with permission of IEEE from a technical paper originally presented by the author at a technical session of the 2nd International IEEE Conference on Microwaves, Communications, Antennas and Electronic Systems (IEEE COMCAS 2009). Copyright 2009 by IEEE. All rights reserved.

Abstract — For the first time ever, a commercially available pulsed-bias, pulsed-RF harmonic load pull system is being offered for high power and wide band-gap devices. Pulsing DC bias in conjunction with pulsing RF reduces slow (long-term) memory effects by minimizing self heating and trapping, giving a more realistic observance of transistor operating conditions. IV, S-Parameter, and Load Pull measurements taken under pulsed-bias pulsed-RF conditions give more accurate and meaningful results for high-power pulsed applications.

Gallium Nitride and Wide Band-Gap Devices

Gallium nitride (GaN) is a wide band-gap material that has been used for LEDs since the 1990s. In recent years, its usage has spread to the microwave community as an enabling technology for high power amplifiers. Originally, GaN was not cost effective for non-military programs, but material maturity, yield improvement, expansion to 4" wafers, and inclusion of lower cost substrates have driven down the cost. Discrete devices, as well as MMICs, are now commercially available using GaN from many foundries worldwide.

Click Here To Download:
•Application Note: Pulsed-Bias Pulsed-RF Harmonic Load Pull For Gallium Nitride (GaN) And Wide Band-Gap (WBG) Devices